SISS71DN Datasheet, PDF (1/9 Pages) Vishay Siliconix – P-Channel 100 V (D-S) MOSFET

www.vishay.com
SiSS71DN
Vishay Siliconix
P-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
-100
R_DS(on) () (MAX.)
0.059 at V_GS = -10 V
0.082 at V_GS = -4.5 V
I_D (A) ^e
-23
-19.6
PowerPAK^® 1212-8S _D
D
D
6
D
7
8
5
Q_g (TYP.)
20 nC
3.3 _mm
1
3.3 ^mm
1
4
3
S
2
S
S
G
Top View
Bottom View
Ordering Information: 
SiSS71DN-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• ThunderFET^® power MOSFET
• Low thermal resistance PowerPAK^® package
with small size and low 0.75 mm profile
• 100 % R_g and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Active clamp
• DC/DC converters
• POE
• Load switch
• Motor drive control
• Battery management
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V_DS
-100
V
V_GS
± 20
T_C = 25 °C
-23
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
-18.5
-6.7 ^{a, b}
Pulsed Drain Current (t = 100 μs)
T_A = 70 °C
-5.4 ^{a, b}
A
I_DM
-40
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
-40 ^e
-4 ^{a, b}
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
-25
E_AS
31
mJ
T_C = 25 °C
57
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
36
4.8 ^{a, b}
W
T_A = 70 °C
3 ^{a, b}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) ^{c, d}
T_J, T_stg
-50 to +150
°C
260
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. T_C = 25 °C.
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient ^{a, b}
t  10 s
Maximum Junction-to-Case (Drain)
Steady state
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 63 °C/W.
SYMBOL
R_thJA
R_thJC
TYPICAL
21
1.7
MAXIMUM
26
2.2
UNIT
°C/W
S16-1378-Rev. A, 11-Jul-16
1
Document Number: 76642
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000