SIS902DN Datasheet, PDF (1/8 Pages) Vishay Siliconix – Dual N-Channel 75-V (D-S) MOSFET

Dual N-Channel 75-V (D-S) MOSFET
SiS902DN
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.186 at V_GS = 10 V
75
0.228 at V_GS = 4.5 V
I_D (A)
4^e
4^e
Q_g (Typ.)
2.1 nC
PowerPAK 1212-8
3.30 mm
D1
8
D1
7
D2
6
D2
5
S1
1
G1
2
3.30 mm
S2
3
G2
4
Bottom View
Ordering Information: SiS902DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Low Thermal Resistance PowerPAK^®
Package with Small Size and Low 1.07 mm
Profile
• 100 % R_g Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• POL
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
75
V
V_GS
± 20
T_C = 25 °C
4^e
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
4^e
3^{a, b}
A
T_A = 70 °C
2.4^{a, b}
Pulsed Drain Current
I_DM
8
Avalanche Current
Single-Pulse Avalanche Energy
I_AS
2
L = 0.1 mH
E_AS
0.2
mJ
T_C = 25 °C
15.4
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
9.9
3.1^{a, b}
W
T_A = 70 °C
2^{a, b}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{c, d}
T_J, T_stg
- 55 to 150
°C
260
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 64804
S09-0661-Rev. A, 20-Apr-09
www.vishay.com
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