SIS439DNT Datasheet, PDF (1/8 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

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SiS439DNT
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
- 30
R_DS(on) () Max.
0.0110 at V_GS = - 10 V
0.0195 at V_GS= - 4.5 V
I_D (A)^f
- 50^e
- 43.5
Thin PowerPAK 1212-8
Q_g (Typ.)
23 nC
3.30 mm
S
1
S
3.30 mm
2
S
3
G
4
D
8
0.75 mm
D
7
D
6
D
5
Bottom View
Ordering Information:
SiS439DNT-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET^® Power MOSFET
• Low Thermal Resistance PowerPAK^® Package
with Small Size and Low 0.75 mm Profile
• 100 % R_g and UIS Tested
• Material categorization: 
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load Switch
• Adaptor Switch
• Notebook PC
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 30
V
V_GS
± 20
T_C = 25 °C
- 50^e
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
- 43.5
- 14.7^{a, b}
Pulsed Drain Current (t = 100 μs)
T_A = 70 °C
I_DM
- 11.7^{a, b}
A
- 90
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
- 43.4
- 3.2^{a, b}
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
- 25
31.25
mJ
T_C = 25 °C
52.1
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
3.3
3.8^{a, b}
W
T_A = 70 °C
2.4^{a, b}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{c, d}
T_J, T_stg
- 50 to 150
°C
260
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
f. Based on T_C = 25 °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, b}
Maximum Junction-to-Case (Drain)
t  10 s
Steady State
Symbol
R_thJA
R_thJC
Typical
26
1.9
Maximum
33
2.4
Unit
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 81 °C/W.
S13-1667-Rev. A, 29-Jul-13
1
Document Number: 62869
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000