SIS430DN Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 25-V (D-S) MOSFET

N-Channel 25-V (D-S) MOSFET
SiS430DN
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0051 at V_GS = 10 V
25
0.0069 at V_GS = 4.5 V
I_D (A)^a
35
35
Q_g (Typ.)
13 nC
PowerPAK^® 1212-8
3.30 mm
D
8
D
7
D
6
D
5
S
1
S
3.30 mm
2
S
3
G
4
Bottom View
Ordering Information: SiS430DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
APPLICATIONS
• DC/DC Converter
- POL
- Server
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
25
V
V_GS
± 20
T_C = 25 °C
35^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
35^a
21.5^{b, c}
17^{b, c}
A
Pulsed Drain Current
I_DM
60
Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
30
E_AS
45
mJ
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
35^a
3.2^{b, c}
A
T_C = 25 °C
52
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
33
3.8^{b, c}
W
T_A = 70 °C
2^{b, c}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_J, T_stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, f}
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
R_thJA
R_thJC
Typical
24
1.9
Maximum
33
2.4
Unit
°C/W
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
Document Number: 69025
S-82655-Rev. A, 03-Nov-08
www.vishay.com
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