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SIS330DN Datasheet, PDF (1/13 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET
New Product
N-Channel 30 V (D-S) MOSFET
SiS330DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) ()
0.0056 at VGS = 10 V
0.0075 at VGS = 4.5 V
ID (A)f
35g
35g
Qg (Typ.)
11.2 nC
PowerPAK 1212-8
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• PWM Optimized
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
3.30 mm
D
8
D
7
D
6
D
5
S
1
S
3.30 mm
2
S
3
G
4
Bottom View
Ordering Information: SiS330DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Notebook
• Server
• High-Side Switch
- Synchronous Buck Converter
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS
± 20
TC = 25 °C
35g
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
35g
19.1a, b
Pulsed Drain Current
TA = 70 °C
17.5a, b
A
IDM
70
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
35g
3.3a, b
Single Pulse Avalanche Current
L = 0.1 mH
IAS
20
Single Pulse Avalanche Energy
EAS
20
mJ
TC = 25 °C
52
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
43
3.7a, b
W
TA = 70 °C
3.1a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TJ, Tstg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, e
Maximum Junction-to-Case (Drain)
t  10 s
Steady State
Symbol
RthJA
RthJC
Typical
24
1.9
Maximum
33
2.4
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on TC = 25 °C.
g. Package limited.
Document Number: 67079
S10-2605-Rev. A, 15-Nov-10
www.vishay.com
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