SIRC16DP Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 25 V (D-S) MOSFET with Schottky Diode

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SiRC16DP
Vishay Siliconix
N-Channel 25 V (D-S) MOSFET with Schottky Diode
PowerPAK^® SO-8 Single
D
D8
D7
D6
5
6.15 _mm
1
Top View
5.15 ^mm
1
2S
3S
4S
G
Bottom View
PRODUCT SUMMARY
MOSFET
V_DS (V)
R_DS(on) max. () at V_GS = 10 V
R_DS(on) max. () at V_GS = 4.5 V
Q_g typ. (nC)
I_D (A) ^{a, g}
SCHOTTKY
25
0.00096
0.00140
31.5
60
V_F (V) at 10 A
I_F (A) ^{a, g}
Configuration
0.55
60
Single plus integrated Schottky
FEATURES
• TrenchFET^® Gen IV power MOSFET
• SKYFET^® with monolithic Schottky diode
• Optimized R_DS - Q_g and R_DS - Q_gd FOM elevates
efficiency for high-frequency switching
• 100 % R_g and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Synchronous buck
D
• Synchronous rectification
• DC/DC conversion
Schottky
G
diode
S
N-channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8
SiRC16DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (T_J = 150 °C)
Pulsed drain current (t = 100 μs)
Continuous source current (MOSFET diode conduction)
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
25
+20, -16
60 ^a
60 ^a
57 ^{b, c}
45 ^{b, c}
250
60 ^a
5 ^{a, b}
30
45
54.3
34.7
5 ^{b, c}
3.2 ^{b, c}
-55 to +150
260
UNIT
V
A
mJ
W
°C
S16-1703-Rev. B, 05-Sep-16
1
Document Number: 77722
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000