SIR422DP Datasheet, PDF (1/13 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET
SiR422DP
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0066 at V_GS = 10 V
40
0.008 at V_GS = 4.5 V
PowerPAK^® SO-8
I_D (A)^a
40
40
Q_g (Typ.)
16.1 nC
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: SiR422DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• POL
D
• Synchronous Rectification
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
40
V
V_GS
± 20
T_C = 25 °C
40^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
40^a
20.5^{b, c}
16.4^{b, c}
A
Pulsed Drain Current
I_DM
70
Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
30
E_AS
45
mJ
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
40^a
4.1^{b, c}
A
T_C = 25 °C
34.7
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
22.2
5^{b, c}
W
T_A = 70 °C
3.2^{b, c}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_J, T_stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, f}
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
R_thJA
R_thJC
Typical
20
3.1
Maximum
25
3.6
Unit
°C/W
Notes:
a. Based on T_C = 25 °C. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 65025
S09-1336-Rev. A, 13-Jul-09
www.vishay.com
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