SIR414DP-T1-GE3 Datasheet, PDF (1/9 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

New Product
N-Channel 40-V (D-S) MOSFET
SiR414DP
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
40
0.0028 at V_GS = 10 V
0.0032 at V_GS = 4.5 V
I_D (A)^a
50
50
Q_g (Typ.)
38 nC
PowerPAK^® SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
APPLICATIONS
• Synchronous Rectification
• Secondary Side DC/DC
D
G
Bottom View
Ordering Information: SiR414DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T_C = 25 °C
T_A = 25 °C
I_S
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
P_D
T_J, T_stg
S
N-Channel MOSFET
Limit
40
± 20
50^a
50^a
33^{b, c}
26^{b, c}
70
50^a
4.9^{b, c}
40
80
83
53
5.4^{b, c}
3.4^{b, c}
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^{b, f}
Maximum Junction-to-Case (Drain)
t ≤ 10 s
R_thJA
18
Steady State
R_thJC
1.0
23
°C/W
1.5
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?64727). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 64727
S09-0319-Rev. A, 02-Mar-09
www.vishay.com
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