SIHU3N50D Datasheet, PDF (1/8 Pages) Vishay Siliconix – D Series Power MOSFET

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SiHU3N50D
Vishay Siliconix
D Series Power MOSFET
PRODUCT SUMMARY
V_DS (V) at T_J max.
R_DS(on) max. () at 25 °C
Q_g (max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
550
V_GS = 10 V
3.2
20
3
5
Single
IPAK
(TO-251)
D
G^{D S}
D
G
S
N-Channel MOSFET
FEATURES
• Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (C_iss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): R_on x Q_g
- Fast Switching
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
IPAK (TO-251)
SiHU3N50D-E3
SiHU3N50D-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
V_GS
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current^a
Linear Derating Factor
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy^b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt ^(d)
T_J = 125 °C
E_AS
P_D
T_J, T_stg
dV/dt
Soldering Recommendations (Peak Temperature)^c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V_DD = 50 V, starting T_J = 25 °C, L = 2.3 mH, R_g = 25 , I_AS = 2.8 A.
c. 1.6 mm from case.
d. I_SD  I_D, starting T_J = 25 °C.
LIMIT
500
± 30
30
3.0
1.9
5.5
0.56
9
104
- 55 to + 150
24
0.22
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S12-0689-Rev. A, 02-Apr-12
1
Document Number: 91493
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000