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SIHS20N50C Datasheet, PDF (1/7 Pages) Vishay Siliconix – High Power Dissipations Capability | |||
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Power MOSFET
SiHS20N50C
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) (ï)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
560
VGS = 10 V
76
21
34
Single
0.270
D
FEATURES
⢠Low Figure-of-Merit Ron x Qg
⢠100 % Avalanche Tested
⢠High Peak Current Capability
⢠dV/dt Ruggedness
⢠Improved trr/Qrr
⢠Improved Gate Charge
⢠High Power Dissipations Capability
⢠Compliant to RoHS Directive 2002/95/EC
Super-247
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
Super-247
SiHS20N50C-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)e
Pulsed Drain Currenta
Linear Derating Factor
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 ï, IAS = 17 A.
c. ISD ï£ 18 A, dI/dt ï£ 380 A/μs, VDD ï£ VDS, TJ ï£ 150 °C.
d. 1.6 mm from case.
e. Limited by maximum junction temperature.
LIMIT
500
± 30
20
11
80
1.8
361
250
5
- 55 to + 150
300d
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
40
0.5
UNIT
V
A
W/°C
mJ
W
V/ns
°C
UNIT
°C/W
Document Number: 91424
S11-0112-Rev. B, 31-Jan-11
www.vishay.com
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