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SIHP28N65EF Datasheet, PDF (1/7 Pages) Vishay Siliconix – EF Series Power MOSFET with Fast Body Diode
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SiHP28N65EF
Vishay Siliconix
EF Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) typ. (Ω) at 25 °C
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
700
VGS = 10 V
146
21
43
Single
TO-220AB
0.102
D
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Fast body diode MOSFET using E series
technology
• Reduced trr, Qrr, and IRRM
• Low figure-of-merit (FOM): Ron x Qg
• Low input capacitance (Ciss)
• Low switching losses due to reduced Qrr
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Telecommunications
- Server and telecom power supplies
• Lighting
- High intensity discharge (HID)
- Light emitting diodes (LEDs)
• Consumer and computing
- ATX power supplies
• Industrial
- Welding
- Battery chargers
• Renewable energy
- Solar (PV inverters)
• Switch mode power suppliers (SMPS)
• Applications using the following topologies
- LLC
- Phase shifted bridge (ZVS)
- 3-level inverter
- AC/DC bridge
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-220AB
SiHP28N65EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current a
VGS at 10 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt d
TJ = 125 °C
Soldering Recommendations (Peak Temperature) c
for 10 s
VDS
VGS
ID
IDM
EAS
PD
TJ, Tstg
dV/dt
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 5.5 A.
c. 1.6 mm from case.
d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
650
± 30
28
18
87
2
427
250
-55 to +150
70
11
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S15-2485-Rev. A, 19-Oct-15
1
Document Number: 91707
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000