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SIHP24N65EF Datasheet, PDF (1/8 Pages) Vishay Siliconix – E Series Power MOSFET with Fast Body Diode
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SiHP24N65EF
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. at 25 °C ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
700
VGS = 10 V
122
17
36
Single
0.156
D
TO-220AB
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Fast Body Diode MOSFET using E Series
Technology
• Reduced trr, Qrr, and IRRM
• Low Figure-of-Merit (FOM) Ron x Qg
• Low Input Capacitance (Ciss)
• Low Switching Losses Due to Reduced Qrr
• Ultra Low Gate Charge (Qg)
• Avalanche Energy Rated (UIS)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Telecommunications
- Server and Telecom Power Supplies
• Lighting
- High-Intensity Discharge (HID)
- Fluorescent Ballast Lighting
• Consumer and Computing
- ATX Power Supplies
• Industrial
- Welding
- Battery Chargers
• Renewable Energy
- Solar (PV Inverters)
• Switch Mode Power Supplies (SMPS)
• Applications using the Following Topologies
- LCC
- Phase shifted Bridge (ZVS)
- 3-Level Inverter
- AC/DC Bridge
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-220AB
SiHP24N65EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dtd
TJ = 125 °C
EAS
PD
TJ, Tstg
dV/dt
Soldering Recommendations (Peak Temperature)c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 7 A.
c. 1.6 mm from case.
d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
650
± 20
30
24
15
65
2
691
250
- 55 to + 150
37
26
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S13-1434-Rev. B, 01-Jul-13
1
Document Number: 91549
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000