SIHP18N5 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Power MOSFET

Power MOSFET
SiHP18N50C
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V) at T_J max.
R_DS(on) ()
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
560
V_GS = 10 V
76
21
29
Single
TO-220AB
0.225
D
FEATURES
• Low Figure-of-Merit R_on x Q_g
• 100 % Avalanche Tested
• High Peak Current Capability
• dV/dt Ruggedness
• Improved t_rr/Q_rr
• Improved Gate Charge
• High Power Dissipations Capability
• Compliant to RoHS Directive 2002/95/EC
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220AB
SiHP18N50C-E3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current^b
Linear Derating Factor
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
TO-220AB
Single Pulse Avalanche Energy^c
Maximum Power Dissipation
Peak Diode Recovery dV/dt^d
TO-220AB
E_AS
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^d
for 10 s
T_J, T_stg
Notes
a. Drain current limited by maximum junction temperature.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. V_DD = 50 V, starting T_J = 25 °C, L = 2.5 mH, R_g = 25 , I_AS = 17 A.
d. I_SD  18 A, dI/dt  380 A/μs, V_DD  V_DS, T_J  150 °C.
e. 1.6 mm from case.
LIMIT
500
± 30
18
11
72
1.8
361
223
5
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91374
S11-0520-Rev. D, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000