SIHP16N50C Datasheet, PDF (1/8 Pages) Vishay Siliconix – Gate Charge Improved Compliant to RoHS Directive 2002/95/EC

SiHP16N50C, SiHB16N50C, SiHF16N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V) at T_J max.
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
560 V
V_GS = 10 V
68
17.6
21.8
Single
TO-220AB
TO-220 FULLPAK
0.38
D
FEATURES
• Low Figure-of-Merit R_on x Q_g
• 100 % Avalanche Tested
• Gate Charge Improved
• T_rr/Q_rr Improved
• Compliant to RoHS Directive 2002/95/EC
S
D
G
D²PAK (TO-263)
GD^S
G
G^D
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
SiHP16N50C-E3
D²PAK (TO-263)
SiHB16N50C-E3
TO-220 FULLPAK
SiHF16N50C-E3
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
LIMIT
PARAMETER
TO220-AB
SYMBOL D²PAK (TO-263)
TO-220
FULLPAK
Drain-Source Voltage
V_DS
500
Gate-Source Voltage
V_GS
± 30
Continuous Drain Current (T_J = 150 °C)^a
T_C = 25 °C
V_GS at 10 V
I_D
16
T_C = 100 °C
10
Pulsed Drain Current^c
I_DM
40
Linear Derating Factor
2
Single Pulse Avalanche Energy^b
E_AS
320
Maximum Power Dissipation
P_D
250
38
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^d
for 10 s
T_J, T_stg
- 55 to + 150
300
Notes
a. Limited by maximum junction temperature.
b. V_DD = 50 V, starting T_J = 25 °C, L = 2.5 mH, R_g = 25 Ω, I_AS = 16 A.
c. Repetitive rating; pulse width limited by maximum junction temperature.
d. 1.6 mm from case.
UNIT
V
A
W/°C
mJ
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91401
S10-0811-Rev. A, 12-Apr-10
www.vishay.com
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