SIHP12N60E Datasheet, PDF (1/8 Pages) Vishay Siliconix – E Series Power MOSFET

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SiHP12N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
V_DS (V) at T_J max.
R_DS(on) max. at 25 °C ()
Q_g max. (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
650
V_GS = 10 V
58
6
13
Single
0.38
D
TO-220AB
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Low Figure-of-Merit (FOM) R_on x Q_g
• Low Input Capacitance (C_iss)
• Reduced Switching and Conduction Losses
• Ultra Low Gate Charge (Q_g)
• Avalanche Energy Rated (UIS)
• Material categorization: For definitions please see
www.vishay.com/doc?99912
APPLICATIONS
• Server and Telecom Power Supplies
• Switch Mode Power Supplies (SMPS)
• Power Factor Correction Power Supplies (PFC)
• Lighting
- High-Intensity Discharge (HID)
- Fluorescent Ballast Lighting
• Industrial
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
- Renewable Energy
- Solar (PV Inverters)
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
TO-220AB
SiHP12N60E-E3
SiHP12N60E-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
V_GS
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current^a
Linear Derating Factor
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy^b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt^d
T_J = 125 °C
E_AS
P_D
T_J, T_stg
dV/dt
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V_DD = 50 V, starting T_J = 25 °C, L = 11.6 mH, R_g = 25 , I_AS = 4.5 A.
c. 1.6 mm from case.
d. I_SD  I_D, dI/dt = 100 A/μs, starting T_J = 25 °C.
LIMIT
600
± 20
30
12
7.8
27
1.2
117
147
- 55 to + 150
37
5
300^c
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S12-0646-Rev. C, 26-Mar-12
1
Document Number: 91479
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000