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SIHJ7N65E Datasheet, PDF (1/11 Pages) Vishay Siliconix – E Series Power MOSFET | |||
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www.vishay.com
SiHJ7N65E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) typ. (ï) at 25 °C
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
700
VGS = 10 V
44
6
9
Single
0.520
PowerPAK® SO-8L Single
D
G
S
N-Channel MOSFET
FEATURES
⢠Low figure-of-merit (FOM) Ron x Qg
⢠Low input capacitance (Ciss)
⢠Reduced switching and conduction losses
⢠Ultra low gate charge (Qg)
⢠Avalanche energy rated (UIS)
⢠Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
⢠Switch mode power supplies (SMPS)
⢠Flyback converter
⢠Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
⢠Consumer
- Wall adaptors
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK SO-8L
SiHJ7N65E-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current a
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energy b
EAS
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Drain-Source Voltage Slope
Reverse Diode dV/dt d
TJ = 125 °C
dV/dt
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 ï, IAS = 2.2 A.
c. ISD ï£ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
650
± 30
7.9
5.0
17
0.77
68
96
-55 to +150
70
14
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
52
1.0
MAX.
65
1.3
UNIT
V
A
W/°C
mJ
W
°C
V/ns
UNIT
°C/W
S16-0659-Rev. A, 18-Apr-16
1
Document Number: 91823
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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