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SIHJ10N60E Datasheet, PDF (1/7 Pages) Vishay Siliconix – Reduced switching and conduction losses | |||
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www.vishay.com
SiHJ10N60E
Vishay Siliconix
E Series Power MOSFET
PowerPAK® SO-8L
D
G
S
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) typ. (ï) at 25 °C
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
50
6
13
Single
0.313
FEATURES
⢠Low figure-of-merit (FOM) Ron x Qg
⢠Low input capacitance (Ciss)
⢠Reduced switching and conduction losses
⢠Ultra low gate charge (Qg)
⢠Avalanche energy rated (UIS)
⢠Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
⢠Switch mode power supplies (SMPS)
⢠Flyback converter
⢠Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
⢠Consumer
- Wall adaptors
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8L
SiHJ10N60E-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current a
Linear derating factor
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single pulse avalanche energy b
Maximum power dissipation
Operating junction and storage temperature range
Drain-source voltage slope
Reverse diode dV/dt c
TJ = 125 °C
EAS
PD
TJ, Tstg
dV/dt
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 ï, IAS = 2.6 A.
c. ISD ï£ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
600
± 30
10
6
23
0.71
95
89
-55 to +150
70
26
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum junction-to-ambient
Maximum junction-to-case (drain)
RthJA
RthJC
TYP.
52
1.0
MAX.
65
1.4
UNIT
V
A
W/°C
mJ
W
°C
V/ns
UNIT
°C/W
S17-0008-Rev. B, 16-Jan-17
1
Document Number: 91930
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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