|
SIHG47N60EF Datasheet, PDF (1/7 Pages) Vishay Siliconix – E Series Power MOSFET with Fast Body Diode | |||
|
www.vishay.com
SiHG47N60EF
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. at 25 °C (ï)
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
225
31
63
Single
0.067
TO-247AC
S
D
G
ï
ï
ï
ï
ï
ï
ï
D
G
S
N-Channel MOSFET
FEATURES
⢠Fast Body Diode MOSFET Using E Series
Technoloy
⢠Reduced trr, Qrr, and IRRM
⢠Low Figure-of-Merit (FOM) Ron x Qg
⢠Low Input Capacitance (Ciss)
⢠Low switching losses due to reduced Qrr
⢠Ultra Low Gate Charge (Qg)
⢠Avalanche Energy Rated (UIS)
⢠Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
⢠Telecommunications
- Server and Telecom Power Supplies
⢠Lighting
- High-Intensity Lighting (HID)
- Light Emitting Diodes (LEDs)
⢠Consumer and Computing
- ATX Power Supplies
⢠Industrial
- Welding
- Battery Chargers
⢠Renewable Energy
- Solar (PV Inverters)
⢠Switching Mode Power Supplies (SMPS)
⢠Applications using the following topologies
- LLC
- Phase Shifted Bridge (ZVS)
- 3-level Inverter
- AC/DC Bridge
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-247AC
SiHG47N60EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dtd
TJ = 125 °C
Soldering Recommendations (Peak Temperature)c
for 10 s
ID
IDM
EAS
PD
TJ, Tstg
dV/dt
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 73.5 mH, Rg = 25 ï, IAS = 6.4 A.
c. 1.6 mm from case.
d. ISD ï£ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
600
± 20
30
47
29
138
3
1500
379
-55 to +150
37
9.7
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S13-2236-Rev. D, 28-Oct-13
1
Document Number: 91559
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
▷ |