SIHF8N50L Datasheet, PDF (1/7 Pages) Vishay Siliconix – Power MOSFET

New Product
Power MOSFET
SiHF8N50L
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V) at T_J max.
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
560
V_GS = 10 V
1
34
7.8
10.4
Single
D
TO-220 FULLPAK
FEATURES
• Low Figure-of-Merit R_on x Q_g
• 100 % Avalanche Tested
• Gate Charge Improved
• T_rr/Q_rr Improved
• Compliant to RoHS Directive 2002/95/EC
G
GDS
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220 FULLPAK
SiHF8N50L-E3
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_DS
V_GS
V_GS at 10 V T_C = 25 °C
I_D
I_DM
Linear Derating Factor
Single Pulse Avalanche Energy^c
Maximum Power Dissipation
Peak Diode Recovery dV/dt^d
T_C = 25 °C
E_AS
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^e
for 10 s
T_J, T_stg
Notes
a. Drain current limited by maximum junction temperature.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. V_DD = 50 V, starting T_J = 25 °C, L = 10 mH, R_g = 25 Ω, I_AS = 6 A.
d. I_SD ≤ 8 A, dI/dt ≤ 460 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
e. 1.6 mm from case.
LIMIT
500
± 30
8
22
0.32
180
40
24
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
W
V/ns
°C
Document Number: 91387
S09-1703-Rev. A, 07-Sep-09
www.vishay.com
1