SIHF28N60EF Datasheet, PDF (1/8 Pages) Vishay Siliconix – EF Series Power MOSFET with Fast Body Diode

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SiHF28N60EF
Vishay Siliconix
EF Series Power MOSFET with Fast Body Diode
D
TO-220 FULLPAK
G
GDS
S
N-Channel MOSFET
PRODUCT SUMMARY
V_DS (V) at T_J max.
R_DS(on) max. () at 25 °C
Q_g max. (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
650
V_GS = 10 V
120
17
33
Single
0.123
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
FEATURES
• Fast body diode MOSFET using E series
technology
• Reduced t_rr, Q_rr, and I_RRM
• Low figure-of-merit (FOM): R_on x Q_g
• Low input capacitance (C_iss)
• Low switching losses due to reduced Q_rr
• Ultra low gate charge (Q_g)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Telecommunications
- Server and telecom power supplies
• Lighting
- High intensity discharge (HID)
- Light emitting diodes (LEDs)
• Consumer and computing
- ATX power supplies
• Industrial
- Welding
- Battery chargers
• Renewable energy
- Solar (PV inverters)
• Switch mode power suppliers (SMPS)
• Applications using the following topologies
- LLC
- Phase shifted bridge (ZVS)
- 3-level inverter
- AC/DC bridge
TO-220 FULLPAK
SiHF28N60EF-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C) ^e
Pulsed Drain Current ^a
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energy ^b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt ^d
T_J = 125 °C
Soldering Recommendations (Peak temperature) ^c
For 10 s
V_DS
V_GS
I_D
I_DM
E_AS
P_D
T_J, T_stg
dV/dt
Mounting Torque
M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 , I_AS = 7 A
c. 1.6 mm from case
d. I_SD  I_D, dI/dt = 900 A/μs, starting T_J = 25 °C
e. Limited by maximum junction temperature
LIMIT
600
± 30
28
18
75
0.31
691
39
-55 to +150
70
50
300
0.6
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
Nm
S17-0294-Rev. C, 27-Feb-17
1
Document Number: 91604
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000