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SIHF22N60S Datasheet, PDF (1/7 Pages) Vishay Siliconix – S Series Power MOSFET | |||
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www.vishay.com
SiHF22N60S
Vishay Siliconix
S Series Power MOSFET
PRODUCT SUMMARY
VDS at TJ max. (V)
RDS(on) max. at 25 °C (ï)
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
98
17
25
Single
0.190
TO-220 FULLPAK
D
G
GDS
S
N-Channel MOSFET
FEATURES
⢠Generation One
⢠High EAR Capability
⢠Lower Figure-of-Merit Ron x Qg
⢠100 % Avalanche Tested
⢠Ultra Low Ron
⢠dV/dt Ruggedness
⢠Ultra Low Gate Charge (Qg)
⢠Compliant to RoHS Directive 2002/95/EC
Note
* Pb containing terminations are not RoHS compliant, exemptions
may apply
APPLICATIONS
⢠PFC Power Supply Stages
⢠Hard Switching Topologies
⢠Solar Inverters
⢠UPS
⢠Motor Control
⢠Lighting
⢠Server Telecom
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220 FULLPAK
SiHF22N60S-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
Continuous Drain Currenta
Pulsed Drain Currentb
Linear Derating Factor
Single Pulse Avalanche Energyc
Repetitive Avalanche Energyb
Maximum Power Dissipation
Drain-Source Voltage Slope
Reverse Diode dV/dte
VGS at 10 V
TC = 25 °C
TC = 100 °C
TJ = 125 °C
VDS
VGS
ID
IDM
EAS
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Limited by maximum junction temperature.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 ï, IAS = 7 A.
d. 1.6 mm from case.
e. ISD ï£ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S11-1882-Rev. D, 26-Sep-11
1
LIMIT
600
± 20
30
22
13
65
2
690
25
250
37
5.3
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
W
V/ns
°C
Document Number: 91394
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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