SIHF18N50D Datasheet, PDF (1/8 Pages) Vishay Siliconix – D Series Power MOSFET

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SiHF18N50D
Vishay Siliconix
D Series Power MOSFET
D
TO-220 FULLPAK
G
GDS
S
N-Channel MOSFET
PRODUCT SUMMARY
V_DS (V) at T_J max.
R_DS(on) max. () at 25 °C
Q_g max. (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
550
V_GS = 10 V
76
11
17
Single
0.28
ORDERING INFORMATION
Package
Lead (Pb)-free
FEATURES
• Optimal design
- Low area specific on-resistance
- Low input capacitance (C_iss)
- Reduced capacitive switching losses
Available
- High body diode ruggedness
- Avalanche energy rated (UIS)
• Optimal efficiency and operation
- Low cost
- Simple gate drive circuitry
- Low figure-of-merit (FOM): R_on x Q_g
- Fast switching
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
APPLICATIONS
• Consumer electronics
- Displays (LCD or Plasma TV)
• Server and telecom power supplies
- SMPS
• Industrial
- Welding
- Induction heating
- Motor drives
• Battery chargers
TO-220 FULLPAK
SiHF18N50D-E3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
V_GS
Continuous Drain Current (T_J = 150 °C) ^e
Pulsed Drain Current ^a
Linear Derating Factor
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy ^b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt ^d
T_J = 125 °C
E_AS
P_D
T_J, T_stg
dV/dt
Soldering Recommendations (Peak temperature) ^c
For 10 s
Mounting Torque
M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V_DD = 50 V, starting T_J = 25 °C, L = 2.3 mH, R_g = 25 , I_AS = 10 A.
c. 1.6 mm from case.
d. I_SD  I_D, starting T_J = 25 °C.
e. Limited by maximum junction temperature.
LIMIT
500
± 30
30
18
11
53
0.3
115
39
-55 to +150
24
0.4
300
0.6
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
Nm
S16-1602-Rev. B, 15-Aug-16
1
Document Number: 91507
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000