SIHF18N50C Datasheet, PDF (1/8 Pages) Vishay Siliconix – Power MOSFET

SiHP18N50C, SiHF18N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V) at T_J max.
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
560
V_GS = 10 V
76
21
29
Single
TO-220
TO-220 FULLPAK
0.225
D
FEATURES
• Low Figure-of-Merit R_on x Q_g
• 100 % Avalanche Tested
• High Peak Current Capability
• dV/dt Ruggedness
• Improved t_rr/Q_rr
• Improved Gate Charge
• High Power Dissipations Capability
• Compliant to RoHS Directive 2002/95/EC
G
S
D
G
GDS
ORDERING INFORMATION
Package
Lead (Pb)-free
S
N-Channel MOSFET
TO-220
SiHP18N50C-E3
TO-220 FULLPAK
SiHF18N50C-E3
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current^b
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Linear Derating Factor
TO-220
FULLPAK
Single Pulse Avalanche Energy^c
E_AS
Maximum Power Dissipation
TO-220
FULLPAK
P_D
Peak Diode Recovery dV/dt^d
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^d
for 10 s
T_J, T_stg
Notes
a. Drain current limited by maximum junction temperature.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. V_DD = 50 V, starting T_J = 25 °C, L = 2.5 mH, R_g = 25 Ω, I_AS = 17 A.
d. I_SD ≤ 18 A, dI/dt ≤ 380 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
e. 1.6 mm from case.
LIMIT
500
± 30
18
11
72
1.8
0.3
361
223
38
5
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91374
S09-1257-Rev. B, 13-Jul-09
www.vishay.com
1