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SIHB21N65EF Datasheet, PDF (1/7 Pages) Vishay Siliconix – E Series Power MOSFET with Fast Body Diode | |||
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SiHB21N65EF
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. (ï) at 25 °C
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
700
VGS = 10 V
106
14
33
Single
0.18
D
D2PAK (TO-263)
GD
S
G
S
N-Channel MOSFET
FEATURES
⢠Fast body diode MOSFET using E series
technology
⢠Reduced trr, Qrr, and IRRM
⢠Low figure-of-merit (FOM) Ron x Qg
⢠Low input capacitance (Ciss)
⢠Low switching losses due to reduced Qrr
⢠Ultra low gate charge (Qg)
⢠Avalanche energy rated (UIS)
⢠Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
⢠Telecommunications
- Server and telecom power supplies
⢠Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
⢠Consumer and computing
- ATX power supplies
⢠Industrial
- Welding
- Battery chargers
⢠Renewable energy
- Solar (PV inverters)
⢠Switch mode power supplies (SMPS)
⢠Applications using the following topologies
- LCC
- Phase shifted bridge (ZVS)
- 3-level inverter
- AC/DC bridge
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
D2PAK (TO-263)
SiHB21N65EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current a
Linear Derating Factor
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt d
TJ = 125 °C
EAS
PD
TJ, Tstg
dV/dt
Soldering Recommendations (Peak Temperature) c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 ï, IAS = 5.1 A.
c. 1.6 mm from case.
d. ISD ï£ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
650
± 30
21
13
53
1.7
367
208
-55 to +150
37
31
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S15-2686-Rev. A, 16-Nov-15
1
Document Number: 91606
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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