SIHA22N60E Datasheet, PDF (1/8 Pages) Vishay Siliconix – E Series Power MOSFET

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SiHA22N60E
Vishay Siliconix
E Series Power MOSFET
D
Thin-Lead TO-220 FULLPAK
G
G ^DS
S
N-Channel MOSFET
PRODUCT SUMMARY
V_DS (V) at T_J max.
R_DS(on) max (). at 25 °C
Q_g max. (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
650
V_GS = 10 V
86
11
24
Single
0.18
FEATURES
• Low figure-of-merit (FOM) R_on x Q_g
• Low input capacitance (C_iss)
• Reduced switching and conduction losses
• Ultra low gate charge (Q_g)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-Intensity discharge (HID)
- Fluorescent ballast lighting
• Consumer
- Adaptors
- Televisions
- Game console
• Computing
- Adaptors
- ATX power supply
ORDERING INFORMATION
Package
Lead (Pb)-free
Thin-Lead TO-220 FULLPAK
SiHA22N60E-E3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C) ^e
Pulsed Drain Current ^a
Linear Derating Factor
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy ^b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt ^d
T_J = 125 °C
E_AS
P_D
T_J, T_stg
dV/dt
Soldering Recommendations (Peak temperature) ^c
for 10 s
Mounting Torque
M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 , I_AS = 5.1 A.
c. 1.6 mm from case.
d. I_SD  I_D, dI/dt = 100 A/μs, starting T_J = 25 °C.
e. Limited by maximum junction temperature.
LIMIT
600
± 30
21
13
56
0.28
367
35
-55 to +150
70
11
300
0.6
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
Nm
S16-1601-Rev. F, 15-Aug-16
1
Document Number: 91573
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000