SIF912EDZ Datasheet, PDF (1/5 Pages) Vishay Siliconix – Bi-Directional N-Channel 30-V (D-S) MOSFET

SiF912EDZ
Vishay Siliconix
Bi-Directional N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.019 @ V_GS = 4.5 V
30
0.0195 @ V_GS = 4.0 V
0.022 @ V_GS = 3.1 V
0.027 @ V_GS = 2.5 V
I_D (A)
10.7
10.5
9.9
9.0
FEATURES
D TrenchFETr Power MOSFET: 2.5-V Rated
D ESD Protected: 3000 V
APPLICATIONS
D Battery Protection Circuitry
D 1-Cell Li-Ion Battery Pack
− LiB/LiP
− Lithium-Polymer
PowerPAKr 2 x 5
1
S₁
2
S₁
G₁
3
D₁
D₂
2.6 kW
G₁
2.6 kW
G₂
6
S₂
5
S₂
4
G₂
Marking Code
MCXYZ
S₁
S₂
Ordering Information: SiF912EDZ-T1—E3
MC: Part # Code
XYZ: Lot Traceability and Date Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (V_GS = 8 V)
Continuous Diode Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"12
10.7
7.4
7.7
5.3
80
2.9
1.3
3.5
1.6
1.8
0.86
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72952
S-50131—Rev. B, 24-Jan-05
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
30
61
4.5
Maximum
36
76
5.6
Unit
_C/W
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