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| SIF902EDZ Datasheet, PDF (1/6 Pages) Vishay Siliconix – Bi-Directional N-Channel 20-V (D-S) MOSFET | |||
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SiF902EDZ
Vishay Siliconix
Bi-Directional N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = 4.5 V
0.023 at VGS = 4.0 V
20
0.026 at VGS = 3.1 V
0.028 at VGS = 2.5 V
ID (A)
10.3
10.0
9.4
9.0
Qg (Typ.)
9.1
FEATURES
⢠Halogen-free
⢠TrenchFET® Power MOSFET: 2.5 V Rated
⢠ESD Protected: 4000 V
APPLICATIONS
⢠Battery Protection Circuitry
- Cell Li-lon LiB/LiP Battery Packs
RoHS
COMPLIANT
PowerPAK® 2 x 5
6
S2
5
S2
4
G2
1
S1 2 mm
2
S1
G1
3
Marking Code
MAXYZ
D1
D2
1.8 kΩ
G1
1.8 kΩ
G2
MA: Part # Code
XYZ: Lot Traceability and Date Code
Ordering Information: SiF902EDZ-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
S2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
ID
10.3
7.0
7.4
5.1
Pulsed Drain Current (VGS = 8 V)
IDM
40
Continuous Diode Current (Diode Conduction)a
IS
3.1
1.5
Maximum Power Dissipationa
TA = 25 °C
TA = 85 °C
PD
3.5
1.6
1.8
0.86
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ⤠10 s
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
30
61
4.8
Maximum
36
76
6.0
Unit
V
A
W
°C
Unit
°C/W
Document Number: 72987
S-80643-Rev. B, 24-Mar-08
www.vishay.com
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