SIB900EDK Datasheet, PDF (1/9 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET

New Product
Dual N-Channel 20-V (D-S) MOSFET
SiB900EDK
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
20
R_DS(on) (Ω)
0.225 at V_GS = 4.5 V
0.270 at V_GS = 2.5 V
0.345 at V_GS = 1.8 V
0.960 at V_GS = 1.5 V
I_D (A)^a
1.5
1.5
1.5
0.5
Q_g (Typ.)
1.1 nC
PowerPAK SC75-6L-Dual
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• New Thermally Enhanced PowerPAK^®
SC-75 Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm Profile
• Typical ESD Protection 2800 V
• Rated ESD Protection 1400 V
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
• Low Voltage Load Switch
D1
D₂
1
S1
D₁
D₁
6
G₂
5
1.60 mm S₂
4
2
G₁
D2
3
D₂
1.60 mm
Marking Code
G₁
CCX
Part # code
XXX
Lot Traceability
and Date code
200 Ω
200 Ω
G₂
S₁
S₂
Ordering Information: SiB900EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V_GS
±6
V
T_C = 25 °C
1.5^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
1.5^a
1.5^{a, b, c}
T_A = 70 °C
1.3^{b, c}
A
Pulsed Drain Current
I_DM
4
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
1.5^a
0.9^{b, c}
T_C = 25 °C
3.1
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2
1.1^{b, c}
W
T_A = 70 °C
0.7^{b, c}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_J, T_stg
- 55 to 150
°C
260
Document Number: 64808
S09-0667-Rev. A, 20-Apr-09
www.vishay.com
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