SIB800EDK Datasheet, PDF (1/11 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode

New Product
SiB800EDK
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode
PRODUCT SUMMARY
V_DS (V)
20
R_DS(on) (Ω)
0.225 at V_GS = 4.5 V
0.270 at V_GS = 2.5 V
0.345 at V_GS = 1.8 V
0.960 at V_GS = 1.5 V
I_D (A)^a
1.5
1.5
1.5
0.5
Q_g (Typ.)
1.1 nC
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
V_f (V)
Diode Forward Voltage
30
0.29 at 10 mA
I_F (A)^a
0.4
PowerPAK SC75-6L-Dual
FEATURES
• Halogen-free According to IEC 61249-2-21
• LITTLE FOOT^® Plus Schottky Power MOSFET
• New Thermally Enhanced PowerPAK^®
SC-75 Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm profile
• Typical ESD Protection 2800 V
APPLICATIONS
• Portable Devices
• DC/DC Converters
K
D
1
A
2
NC
K
3
D
K
6
D
G
5
1.60 mm _S
4
1.60 mm
Marking Code
G
Part # code
GAX
XXX
Lot Traceability
and Date code
Ordering Information: SiB800EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
200 Ω
S
A
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage (MOSFET)
V_DS
20
Reverse Voltage (Schottky)
V_KA
30
V
Gate-Source Voltage (MOSFET)
V_GS
±6
T_C = 25 °C
1.5^a
Continuous Drain Current (T_J = 150 °C) (MOSFET)
T_C = 70 °C
T_A = 25 °C
I_D
1.5^a
1.5^{a, b, c}
T_A = 70 °C
1.3^{b, c}
Pulsed Drain Current (MOSFET)
I_DM
4
A
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
T_C = 25 °C
T_A = 25 °C
I_S
1.5^a
0.9^{b, c}
Average Forward Current (Schottky)
I_F
0.4^b
Pulsed Forward Current (Schottky)
I_FM
0.8
T_C = 25 °C
3.1
Maximum Power Dissipation (MOSFET)
T_C = 70 °C
T_A = 25 °C
2
1.1^{b, c}
T_A = 70 °C
T_C = 25 °C
P_D
0.7^{b, c}
3.1
W
Maximum Power Dissipation (Schottky)
T_C = 70 °C
T_A = 25 °C
2
1.1^{b, c}
T_A = 70 °C
0.7^{b, c}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_J, T_stg
- 55 to 150
°C
260
Document Number: 68860
S-83045-Rev. B, 22-Dec-08
www.vishay.com
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