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SI9933BDY Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual P-Channel 2.5-V (G-S) MOSFET | |||
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New Product
Si9933BDY
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.06 @ VGS = â4.5 V
â20
0.10 @ VGS = â2.5 V
ID (A)
â4.7
â3.7
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
S1
G1
Ordering Information: Si9933BDYâE3 (Lead Free)
Si9933BDY-T1âE3 (Lead Free with Tape and Reel)
D1
P-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
â20
"12
â4.7
â3.6
â3.8
â2.8
â20
â1.7
â0.9
2.0
1.1
1.3
0.7
â55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady State
Steady State
RthJA
RthJF
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72748
S-40237âRev. A, 16-Feb-04
Typical
55
90
33
Maximum
62.5
110
40
Unit
_C/W
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