SI9910 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Adaptive Power MOSFET Driver1

Adaptive Power MOSFET Driver¹
Si9910
Vishay Siliconix
FEATURES
D dv/dt and di/dt Control
D Undervoltage Protection
D Short-Circuit Protection
D t_rr Shoot-Through Current Limiting
D Low Quiescent Current
D CMOS Compatible Inputs
D Compatible with Wide Range of MOSFET Devices
D Bootstrap and Charge Pump Compatible
(High-Side Drive)
DESCRIPTION
The Si9910 Power MOSFET driver provides optimized gate
drive signals, protection circuitry and logic level interface. Very
low quiescent current is provided by a CMOS buffer and a
high-current emitter-follower output stage. This efficiency
allows operation in high-voltage bridge applications with
“bootstrap” or “charge-pump” floating power supply
techniques.
The non-inverting output configuration minimizes current
drain for an n-channel “on” state. The logic input is internally
diode clamped to allow simple pull-down in high-side drives.
Fault protection circuitry senses an undervoltage or output
short-circuit condition and disables the power MOSFET.
Addition of one external resistor limits maximum di/dt of the
external Power MOSFET. A fast feedback circuit may be used
to limit shoot-through current during t_rr (diode reverse recovery
time) in a bridge configuration.
The Si9910 is available in 8-pin plastic DIP and SOIC
packages, and are specified over the industrial, D suffix (−40
to 85_C) temperature range. In SOIC-8 packaging both
standard and lead (Pb)-free options are available.
FUNCTIONAL BLOCK DIAGRAM
V_DD
INPUT
V_DS
Undervoltage/
Overcurrent
Protection
2-ms
Delay
V_SS
1. Patent Number 484116.
Document Number: 70009
S-40707—Rev. G, 19-Apr-04
R3
*100 kW
DRAIN
PULL-UP
PULL-DOWN
C1
*2 to 5 pF
R2
*250 W
I_SENSE
R1
*0.1 W
* Typical Values
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