SI9801DY Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-/P-Channel, Reduced Qg, Fast Switching Half-Bridge

Si9801DY
Vishay Siliconix
N-/P-Channel, Reduced Q_g, Fast Switching Half-Bridge
PRODUCT SUMMARY
V_DS (V)
N-Channel
20
P-Channel
–20
r_DS(on) (W)
0.055 @ V_GS = 4.5 V
0.075 @ V_GS = 3.0 V
0.080 @ V_GS = –4.5 V
0.120 @ V_GS = –3.0 V
I_D (A)
"4.5
"3.8
"4.0
"3.0
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8D
7D
6D
5D
S₂
G₂
D
G₁
S₁
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"4.5
"14
–20
"4.0
"3.6
"3.0
"20
1.7
–1.7
2.0
1.3
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient^a
Parameter
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70712
S-61825—Rev. C, 16-Aug-99
Symbol
R_thJA
N- or P-Channel
62.5
Unit
_C/W
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