SI9410BDY_05 Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET
Si9410BDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.024 @ V_GS = 10 V
0.033 @ V_GS = 4.5 V
I_D (A)
8.1
6.9
FEATURES
D TrenchFETr Power MOSFETS
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information:
Si9410BDY
Si9410BDY-T1 (with Tape and Reel)
Si9410BDY—E3 (Lead (Pb)-Free)
Si9410BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
8.1
6.2
6.5
5.0
30
2.1
1.2
2.5
1.5
1.6
0.9
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 72269
S-50153—Rev. B, 31-Jan-05
Symbol
R_thJA
R_thJF
Typical
40
70
20
Maximum
50
85
24
Unit
_C/W
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