SI7900AEDN_08 Datasheet, PDF (1/12 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET, Common Drain

Si7900AEDN
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.026 at V_GS = 4.5 V
20
0.030 at V_GS = 2.5 V
0.036 at V_GS = 1.8 V
I_D (A)
8.5
8
7
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFET: 1.8 V Rated
• New PowerPak^® Package
- Low Thermal Resistance, R_thJC
- Low 1.07 mm Profile
• 3000 V ESD Protection
RoHS
COMPLIANT
PowerPAK 1212-8
APPLICATIONS
• Protection Switch for 1-2 Li-ion Batteries
3.30 mm
S1
1
G1
3.30 mm
2
S2
3
G2
4
G₁
D
8
D
7
D
6
D
5
Bottom View
Ordering Information: Si7900AEDN-T1-E3 (Lead (Pb)-free)
Si7900AEDN-T1-GE3 (Lead (Pb)-free and Halogen-free)
2.6 kΩ
D₁
G₂
S₁
N-Channel
D₂
2.6 kΩ
S₂
N-Channel
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 85 °C
I_D
8.5
6
6.4
4.3
A
I_DM
30
Continuous Source Current (Diode Conduction)^a
I_S
2.9
1.4
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
3.1
1.5
1.6
0.79
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
32
65
2.2
Maximum
40
82
2.8
Unit
°C/W
Document Number: 72287
S-81544-Rev. C, 07-Jul-08
www.vishay.com
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