SI7892BDP Datasheet, PDF (1/1 Pages) Vishay Siliconix – N-Channel, 30-V (D-S) MOSFET

Specification Comparison
Vishay Siliconix
Si7892BDP vs. Si7892DP
Description:
Package:
Pin Out:
N-Channel, 30-V (D-S) MOSFET
PowerPAK® SO-8
Identical
Part Number Replacements:
Si7892BDP-T1-E3 Replaces Si7892DP-T1-E3
Si7892BDP-T1-E3 Replaces Si7892DP-T1
Summary of Performance:
The Si7892BDP is the replacement to the original Si7892DP; both parts perform identically, including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (T_A = 25^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si7892BDP Si7892DP Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
+20
30
+20
V
Continuous Drain Current
TA = 25°C
TA = 70°C
ID
25
20
25
20
Pulsed Drain Current
Continuous Source Current
(MOSFET Diode Conduction)
IDM
60
60
A
IS
4.1
4.5
Avalanche Current
L = 0.1 mH
IAS
40
50
Power Dissipation
TA = 25°C
TA = 70°C
PD
5
3.2
5.4
3.4
W
Operating Junction & Storage Temperature Range
Tj & Tstg
-55 to 150
-55 to 150
°C
Maximum Junction-to-Ambient
RthJA
25
23
°C/W
SPECIFICATIONS (T_J = 25^OC UNLESS OTHERWISE NOTED)
Si7892BDP
Parameter
Symbol
Min
Typ
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
VGS = 10 V
VGS(th)
1.0
IGSS
IDSS
ID(on)
30
Drain-Source On-Resistance
VGS= 10 V
VGS = 4.5 V
rDS(on)
0.0034
0.0047
Forward Transconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
gfs
VSD
C_iss
C_oss
C_rss
Qg
Qgs
Qgd
Rg
85
0.75
3775
630
295
27
11.4
8.1
0.5
1.2
Switching
Turn-On Time*
Turn-Off Time*
Source-Drain Reverse Recovery Time
td(on)
20
tr
13
td(off)
62
tf
20
trr
40
Max
3.0
+100
1
0.0042
0.0057
1.2
40
2.0
30
20
100
35
60
Si7892DP
Min Typ
Max Unit
1.0
3.0
V
+100
nA
1
µA
30
A
0.0037 0.0045
0.0048
0.006
Ω
80
S
0.75
1.2
V
NS
NS
NS
25
6.7
9.7
0.5
NS
17
10
65
35
50
pF
35
nC
2.4
Ω
30
20
130
ns
60
80
Document Number 74064
06-May-05
www.vishay.com