SI7884DP Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET
Si7884DP
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
40
r_DS(on) (W)
0.007 @ V_GS = 10 V
0.0095 @ V_GS = 4.5 V
I_D (A)
20
17
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D PWM Optimized for Fast Switching
D 100% R_g Tested
APPLICATIONS
D Sychronous Rectifier
PowerPAK SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7884DP-T1
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
L = 0.1 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_AS
I_S
P_D
T_J, T_stg
40
"20
20
12
16
10
50
30
4.7
1.7
5.2
1.9
3.3
1.2
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71855
S-32077—Rev. D, 13-Oct-03
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
19
52
1.2
Maximum
24
65
1.8
Unit
_C/W
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