SI7460DP_15 Datasheet, PDF (1/13 Pages) Vishay Siliconix – N-Channel 60-V (D-S) Fast Switching MOSFET

Si7460DP
Vishay Siliconix
N-Channel 60-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0096 at V_GS = 10 V
60
0.012 at V_GS = 4.5 V
I_D (A)
18
16
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFETs
• New Low Thermal Resistance PowerPAK^®
Package with Low 1.07 mm Profile
PowerPAK SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7460DP-T1-E3 (Lead (Pb)-free)
Si7460DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
60
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
18
14
11
8
Pulsed Drain Current
I_DM
40
A
Continuous Source Current (Diode Conduction)^a
I_S
4.3
1.6
Avalanche Current
I_AS
50
Avalanche Energy
E_AS
125
mJ
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
5.4
1.9
3.4
1.2
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^b,c
T_J, T_stg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
t ≤ 10 s
Steady State
R_thJA
18
52
23
65
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R_thJC
1.0
1.3
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72126
S09-0227-Rev. D, 09-Feb-09
www.vishay.com
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