SI7459DP Datasheet, PDF (1/8 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET
Si7459DP
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 30
0.0068 at V_GS = - 10 V
I_D (A)
- 22
PowerPAK SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7459DP-T1-E3 (Lead (Pb)-free)
Si7459DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFETs
• New Low Thermal Resistance PowerPAK^®
Package with Low 1.07 mm Profile
APPLICATIONS
• Battery and Load Switching
- Notebook Computers
- Notebook Battery Packs
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 30
V
V_GS
± 25
Continuous Drain Current (T_J = 150°C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
- 22
- 13
- 17
- 10
A
I_DM
- 60
Continuous Source Current (Diode Conduction)^a
I_S
- 4.5
- 1.6
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
5.4
1.9
3.4
1.2
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^b,c
T_J, T_stg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t ≤ 10 s
Steady State
Symbol
R_thJA
Typical
18
52
Maximum
23
65
Unit
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R_thJC
1.0
1.5
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72631
S09-0273-Rev. D, 16-Feb-09
www.vishay.com
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