SI7456DP Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET
Si7456DP
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
100
r_DS(on) (W)
0.025 @ V_GS = 10 V
0.028 @ V_GS = 6.0 V
I_D (A)
9.3
8.8
PowerPAK SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7456DP-T1
FEATURES
D TrenchFETr Power MOSFETS
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D PWM Optimized for Fast Switching
D 100% R_g Tested
APPLICATIONS
D Primary Side Switch for High Density DC/DC
D Telecom/Server 48-V, Full-/Half-Bridge DC/DC
D Industrial and 42-V Automotive
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy (Duty Cycle v1%)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
L = 0.1 mH
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
I_S
P_D
T_J, T_stg
100
"20
9.3
5.7
6.7
4.1
40
30
45
4.3
1.6
5.2
1.9
2.7
1.0
- 55 to 150
Unit
V
A
mJ
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 71603
S-31989—Rev. D, 13-Oct-03
Symbol
R_thJA
R_thJC
Typical
19
52
1.5
Maximum
24
65
1.8
Unit
_C/W
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