SI7401DN-RC Datasheet, PDF (1/3 Pages) Vishay Siliconix – R-C Thermal Model Parameters

R-C Thermal Model Parameters
Si7401DN_RC
Vishay Siliconix
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
RT1
4.5197
362.3679 u
RT2
7.4284
504.3467 m
RT3
11.8825
972.1139 m
RT4
56.6379
937.1926 m
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
CT1
6.7430 m
1.9260 m
CT2
32.7582 m
787.5516 u
CT3
109.4727 m
18.2079 m
CT4
1.1804
9.3126 m
Foot
N/A
N/A
N/A
N/A
Foot
N/A
N/A
N/A
N/A
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 73834
Revision 03-Mar-06
www.vishay.com
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