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SI7234DP Datasheet, PDF (1/13 Pages) Vishay Siliconix – Dual N-Channel 12-V (D-S) MOSFET
New Product
Dual N-Channel 12-V (D-S) MOSFET
Si7234DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0034 at VGS = 4.5 V
12
0.005 at VGS = 2.5 V
ID (A)a
60
60
Qg (Typ.)
37 nC
PowerPAK® SO-8
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
APPLICATIONS
• Synchronous Rectification
• DC-DC Point-of-Load
RoHS
COMPLIANT
6.15 mm
D1
8
D1
7
D2
6
D2
5
S1
1
G1
2
5.15 mm
S2
3
G2
4
Bottom View
Ordering Information: Si7234DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
D2
G1
G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
12
V
VGS
± 12
TC = 25 °C
60a
Continuous Drain Current (TJ = 150 °C)
TC = 85 °C
TA = 25 °C
ID
60a
24.8b, c
TA = 85 °C
20b, c
A
Pulsed Drain Current
IDM
80
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
38
2.9b, c
TC = 25 °C
46
Maximum Power Dissipation
TC = 85 °C
TA = 25 °C
PD
29
3.5b, c
W
TA = 85 °C
2.2b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
t ≤ 10 s
RthJA
26
Maximum Junction-to-Case (Drain)
Steady State
RthJC
2.2
35
°C/W
2.7
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 85 °C/W.
Document Number: 68700
S-81219-Rev. A, 02-Jun-08
www.vishay.com
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