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SI7228DN Datasheet, PDF (1/13 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET
Dual N-Channel 30-V (D-S) MOSFET
Si7228DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.020 at VGS = 10 V
30
0.025 at VGS = 4.5 V
ID (A)f
26
23
Qg (Typ.)
4.1 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 UIS Tested
• Compliant to RoHS Directive 2002/95/EC
PowerPAK® 1212-8
3.30 mm
S1
1
G1
2
3.30 mm
S2
3
G2
4
D1
8
D1
7
D2
6
D2
5
Bottom View
Ordering Information: Si7228DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Synchronous Rectification
• Notebook System Power
• POL
D1
D2
• Low Current DC/DC
G1
G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS
± 20
TC = 25 °C
26
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
21
8.8a, b
Pulsed Drain Current
TA = 70 °C
7a, b
A
IDM
35
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
19
2.2a, b
Single Pulse Avalanche Current
L = 0.1 mH
IAS
14
Single Pulse Avalanche Energy
EAS
9.8
mJ
TC = 25 °C
23
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
14.8
2.6a, b
W
TA = 70 °C
1.7a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TJ, Tstg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, e
t ≤ 10 s
RthJA
38
Maximum Junction-to-Case (Drain)
Steady State
RthJC
4.3
48
°C/W
5.4
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 94 °C/W.
f. Based on TC = 25 °C.
Document Number: 64806
S09-0666-Rev. A, 20-Apr-09
www.vishay.com
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