SI7218DN Datasheet, PDF (1/13 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET
Si7218DN
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.025 at V_GS = 10 V
30
0.033 at V_GS = 4.5 V
I_D (A)
24
21
Q_g (Typ.)
5 nC
PowerPAK^® 1212-8
3.30 mm
S1
1
G1
2
3.30 mm
S2
3
G2
4
D1
8
D1
7
D2
6
D2
5
Bottom View
Ordering Information: Si7218DN-T1-E3 (Lead (Pb)-free)
Si7218DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
APPLICATIONS
• Synchronous Rectification
• Notebook System Power
• POL
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
T_C = 25 °C
24
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
19
8^{a, b}
Pulsed Drain Current
T_A = 70 °C
6.5^{a, b}
A
I_DM
35
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
19
2.2^{a, b}
Single Pulse Avalanche Current
L = 0.1 mH
I_AS
10
Single Pulse Avalanche Energy
E_AS
5
mJ
T_C = 25 °C
23
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
14.8
2.6^{a, b}
W
T_A = 70 °C
1.7^{a, b}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{c, d}
T_J, T_stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^{a, e}
t ≤ 10 s
R_thJA
38
Maximum Junction-to-Case (Drain)
Steady State
R_thJC
4.3
48
°C/W
5.4
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 94 °C/W.
f. Based on T_C = 25 °C.
Document Number: 73958
S-83044-Rev. C, 22-Dec-08
www.vishay.com
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