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SI6973DQ Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual P-Channel 1.8-V (G-S) MOSFET | |||
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New Product
Si6973DQ
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.030 @ VGS = â4.5 V
â20
0.039 @ VGS = â2.5 V
0.055 @ VGS = â1.8 V
ID (A)
â4.8
â4.2
â3.5
S1
S2
TSSOP-8
D1 1 D
S1 2
S1 3
Si6973DQ
G1 4
Top View
8 D2
7 S2
6 S2
5 G2
G1
G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
â20
"8
â4.8
â4.1
â3.9
â3.2
â30
â1.0
â0.7
1.14
0.83
0.73
0.53
â55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
Document Number: 71190
S-01058âRev. A, 22-May-00
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
86
124
52
Maximum
110
150
65
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
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