SI6966DQ Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Dual N-Channel 2.5V Specified PowerTrench MOSFET

Si6966DQ
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
20
0.030 at V_GS = 4.5 V
0.040 at V_GS = 2.5 V
I_D (A)
4.5
3.9
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFETs: 2.5 V Rated
Pb-free
Available
RoHS*
COMPLIANT
D₁
D₂
TSSOP-8
D₁ 1
S_{1 2}
S_{1 3}
G_{1 4}
Si6966DQ
Top View
8 D2
7 ^S2
6 ^S2
5 ^G2
Ordering Information: Si6966DQ-T1
Si6966DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G₁
S₁
N-Channel MOSFET
G₂
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
4.5
4.0
3.6
3.0
A
I_DM
30
Continuous Source Current (Diode Conduction)^a
I_S
1.25
0.75
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.14
0.83
0.73
0.53
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
86
124
52
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71808
S-81221-Rev. C, 02-Jun-08
Maximum
110
150
65
Unit
°C/W
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