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| SI6880AEDQ Datasheet, PDF (1/1 Pages) Vishay Siliconix – Specification Comparison | |||
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Specification Comparison
Vishay Siliconix
Si6880AEDQ vs. Si6880EDQ
Description: N-Channel, 1.8-V (G-S) Battery Switch with ESD Protection
Package: TSSOP-8
Pin Out:
Identical
Part Number Replacements:
Si6880AEDQ-T1 Replaces Si6880EDQ-T1
Si6880AEDQ-T1âE3 (Lead Free version) Replaces Si6880EDQ-T1
Summary of Performance:
The Si6880AEDQ is the replacement for the original Si6880EDQ; both parts perform identically including limits to the
parametric tables below.
ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol Si6880AEDQ
Si6880EDQ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (MOSFET Diode Conduction)
Power Dissipation
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
VDS
VGS
ID
IDM
IS
PD
Tj and Tstg
RthJA
20
"12
7.2
5.7
30
1.5
1.5
0.96
â55 to 150
84
20
"12
7.5
6
30
1.6
1.78
1.14
â55 to 150
70
Unit
V
A
W
_C
_C/W
SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED)
Si6880AEDQ
Parameter
Symbol
Min
Typ
Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
VGS = 4.5 V
VGS = 12 V
VGS = 4.5 V
VGS = 4.5 V
VGS = 2.5 V
VGS = 1.8 V
VG(th)
IGSS
IDSS
ID(on)
rDs(on)
gfs
VSD
0.8
0.9
"1000
"10
1
20
0.014
0.018
0.016
0.022
0.018
0.025
45
0.61
1.1
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
22
35
Qgs
2.0
Qgd
3.6
Switching
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
1.0
1.5
1.6
2.5
6
10
5.5
10
Si6880EDQ
Min Typ Max Unit
0.45
V
"250
nA
"10
mA
1
mA
20
A
0.015
0.018
0.017
0.022
W
0.020
0.016
39
S
0.65
1.1
V
27
40
3.0
nC
5.5
1.5
2.3
800
1200
ms
6
10
5.5
10
Document Number: 72902
22-Mar-04
www.vishay.com
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