SI5933DC Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual P-Channel 1.8-V (G-S) MOSFET

Si5933DC
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.110 @ V_GS = --4.5 V
--20
0.160 @ V_GS = --2.5 V
0.240 @ V_GS = --1.8 V
1206-8 ChipFETt
1
S₁
D₁
D₁
G₁
S₂
D₂
G₂
D₂
Bottom View
Ordering Information: Si5933DC-T1
I_D (A)
--3.6
--3.0
--2.4
S₁
S₂
G₁
G₂
Marking Code
DC XX
Lot Traceability
and Date Code
Part # Code
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
--20
V_GS
8
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
I_D
I_DM
I_S
P_D
T_J, T_stg
--3.6
--2.7
--2.6
--1.9
--10
--1.8
--0.9
2.1
1.1
1.1
0.6
--55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
50
Steady State
R_thJA
90
Steady State
R_thJF
30
60
110
_C/W
40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71238
S-21251—Rev. B, 05-Aug-02
www.vishay.com
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