SI5933DC-T1-E3 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Dual P-Channel 1.8 V (G-S) MOSFET

Dual P-Channel 1.8 V (G-S) MOSFET
Si5933DC
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
- 20
R_DS(on) (Ω)
0.110 at V_GS = - 4.5 V
0.160 at V_GS = - 2.5 V
0.240 at V_GS = - 1.8 V
I_D (A)
- 3.6
- 3.0
- 2.4
Q_g (Typ.)
5.1
1206-8 ChipFET^®
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S₁
D₁
G₁
D₁
S₂
D₂
G₂
D₂
Marking Code
DC XX
Lot Traceability
and Date Code
Part # Code
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFETs: 1.8 V Rated
• Compliant to RoHS Directive 2002/95/EC
S₁
S₂
G₁
G₂
Bottom View
Ordering Information: Si5933DC-T1-E3 (Lead (Pb)-free)
Si5933DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 85 °C
I_D
- 3.6
- 2.6
- 2.7
- 1.9
A
I_DM
- 10
Continuous Source Current (Diode Conduction)^a
I_S
- 1.8
- 0.9
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
2.1
1.1
1.1
0.6
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
T_J, T_stg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
t≤5s
50
Steady State
R_thJA
90
60
110
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
R_thJF
30
40
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71238
S10-0936-Rev. E, 19-Apr-10
www.vishay.com
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