SI5904DC_10 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Dual N-Channel 2.5 V (G-S) MOSFET

Si5904DC
Vishay Siliconix
Dual N-Channel 2.5 V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
20
0.075 at V_GS = 4.5 V
0.134 at V_GS = 2.5 V
I_D (A)
± 4.2
± 3.1
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET: 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC
1206-8 ChipFET^®
1
S₁
D₁
D₁
G₁
S₂
D₂
G₂
D₂
Bottom View
Marking Code
CB XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si5904DC-T1-E3 (Lead (Pb)-free)
Si5904DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 85 °C
I_D
± 4.2
± 3.0
± 3.1
± 2.2
A
I_DM
± 10
Continuous Source Current (Diode Conduction)^a
I_S
1.8
0.9
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
2.1
1.1
1.1
0.6
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
T_J, T_stg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
t≤5s
Steady State
R_thJA
50
90
60
110
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
R_thJF
30
40
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71065
S10-0548-Rev. D, 08-Mar-10
www.vishay.com
1