SI5904DC_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET

Si5904DC
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
20
r_DS(on) (W)
0.075 @ V_GS = 4.5 V
0.134 @ V_GS = 2.5 V
I_D (A)
"4.2
"3.1
FEATURES
D TrenchFETr Power MOSFET
D 2.5-V Rated
D Lead (Pb)-Free Version is RoHS
Compliant
Available
1206-8 ChipFETt
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S₁
D₁
D₁
G₁
S₂
D₂
G₂
D₂
Bottom View
D₁
D₂
Marking Code
CB XX
Lot Traceability
and Date Code
Part # Code
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
Ordering Information: Si5904DC-T1
Si5904DC-T1—E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
"4.2
"3.0
1.8
2.1
1.1
20
"12
"10
−55 to 150
260
"3.1
"2.2
0.9
1.1
0.6
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 5 sec
50
Steady State
R_thJA
90
Steady State
R_thJF
30
60
110
_C/W
40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71065
S-50695—Rev. C, 18-Apr-05
www.vishay.com
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